SH8J62 is a low on-resistance P-channel MOSFET from ROHM with built-in G-S protection diode, suitable for switching applications.
The ROHM SH8J62 is a P‑channel MOSFET offered in a small SOP‑8 surface‑mount package. It features low on‑resistance, a built‑in gate‑source protection diode, and is suitable for switching applications.
The datasheet provides absolute maximum ratings, electrical characteristics, typical performance curves, and recommended measurement circuits for evaluating the device's behavior under various conditions.
| Drain‑source voltage (Voss) | -30 V |
|---|---|
| Gate‑source voltage (Vass) | +20 V |
| Continuous drain current (Ib) | 44.5 A |
| Pulsed drain current (Idp) | 18 A |
| Continuous source current (Is) | 1.6 A |
| Total power dissipation (Po) | 2.0 W (total) |
| Channel temperature range | 150 °C |
| Storage temperature range | -55 °C to +150 °C |
| Input capacitance (Ciss) | 800 pF |
| Output capacitance (Coss) | 120 pF |
The SH8J62 can withstand a drain‑source voltage of up to -30 V.
It is rated for a continuous drain current of 44.5 A.
The typical input capacitance is 800 pF.
The device can be stored from –55 °C up to +150 °C.