This document provides information about the structure, dimensions, features, and application of the ROHM 4V Drive Pch+Pch MOSFET SH8J65. It also includes packaging specifications and absolute maximum ratings.
The SH8J65 is a 4 V drive P‑channel MOSFET offered in a small surface‑mount SOP8 package. It features low on‑resistance, a built‑in gate‑source protection diode, and is intended for switching applications.
The datasheet lists absolute maximum ratings such as a -30 V drain‑source voltage, 47 A continuous drain current, and a 150 °C junction temperature. Electrical characteristics, characteristic curves, and example application circuits are provided to aid designers in implementing the device.
| Drain‑Source Voltage (VDS) | -30 V |
|---|---|
| Gate‑Source Voltage (VGS) | +20 V |
| Continuous Drain Current (ID) | 47.0 A |
| Pulsed Drain Current (ID,pulse) | 28 A |
| Continuous Source Current (IS) | 1.6 A |
| Total Power Dissipation | 20 W |
| Junction Temperature (Tj) | 150 °C |
| Storage Temperature Range | -55 °C to +150 °C |
| Package | SOP8 surface‑mount |
The device is rated for a drain‑source voltage of -30 V.
It can conduct up to 47.0 A continuously.
The junction temperature is specified up to 150 °C, with storage ranging from -55 °C to +150 °C.
The MOSFET is supplied in a small surface‑mount SOP8 package.