This document describes the features and characteristics of the 4V Drive Nch + Nch MOSFET SH8K11 from ROHM, including low on-resistance, built-in G-S protection diode, and small surface mount package (SOP8).
The SH8K11 is a silicon N‑channel MOSFET with a low on‑resistance, built‑in gate‑source protection diode, and a small SOP‑8 surface‑mount package. It is intended for switching applications in general‑purpose electronic equipment.
This datasheet includes features, absolute maximum ratings, detailed electrical characteristics, typical output curves, measurement circuit diagrams, and legal notices. It also provides packaging details and recommended application guidelines.
| Drain‑source voltage (VDS) | 30 V |
|---|---|
| Gate‑source voltage (VGS) | +20 V |
| Continuous drain current (ID) | 43.5 A |
| Pulsed drain current (ID,pulse) | 14 A |
| Power dissipation (PD) | 2.0 W |
| Channel temperature (TCH) | 150 °C |
| Storage temperature range | -55 °C to +150 °C |
| On‑state resistance (RDS(on)) | 90 mΩ (typ) |
The maximum drain‑source voltage is 30 V.
It can handle a continuous drain current of 43.5 A.
The typical on‑state resistance is about 90 mΩ.
The gate‑source voltage rating is +20 V.