SH8J66 is a low on-resistance P-channel MOSFET with a built-in G-S protection diode, packaged as SOP8.
The SH8J66 is a 4 V P‑channel MOSFET offered in a small SOP‑8 surface‑mount package. It features low on‑resistance, a built‑in gate‑source protection diode, and is designed for switching applications.
The datasheet lists absolute maximum ratings, detailed electrical characteristics such as drain‑source voltage, current limits, and power dissipation, as well as typical characteristic curves and measurement circuit examples for evaluating switching performance.
| Drain‑source voltage (VDS) | -30 V |
|---|---|
| Gate‑source voltage (VGS) | +20 V |
| Continuous drain current (ID) | +9 A |
| Pulsed drain current (ID,pulse) | +36 A |
| Total power dissipation (PD) | 2.0 W |
| Channel temperature rating | 150 °C |
| Storage temperature range | -55 °C to +150 °C |
| On‑resistance | Low |
| Package type | SOP‑8 |
| Built‑in protection diode | Yes |
The SH8J66 can tolerate a drain‑source voltage of up to -30 V.
The device is rated for a continuous drain current of +9 A.
It is supplied in a small SOP‑8 surface‑mount package.
Yes, it has a built‑in gate‑source protection diode.