SH8K14 is a Nch + Nch MOSFET device produced by ROHM. It has the characteristics of low on-resistance, built-in G-S protection diode and small surface mount package, and is suitable for switching applications.
This datasheet describes the ROHM SH8K14 N‑channel MOSFET, a 4 V drive device offered in a small SOP‑8 surface‑mount package. It lists key features such as low on‑resistance, a built‑in ESD protection diode, and typical application circuits.
The document includes absolute maximum ratings, detailed electrical characteristics, characteristic curves, measurement circuit diagrams and legal notices. All specifications are given for a junction temperature of 25 °C unless otherwise noted.
| Drain‑source voltage (VDS) max | 30 V |
|---|---|
| Gate‑source voltage (VGS) max | +20 V |
| Continuous drain current (ID) max | 7.0 A |
| Pulsed drain current (ID(pulse)) max | 128 A |
| Source current continuous max | 1.6 A |
| Body diode pulsed current max | 28 A |
| Power dissipation (PD) max | 2.0 W |
| Maximum channel temperature (TCH) | 150 °C |
| Storage temperature range | -55 °C to +150 °C |
The SH8K14 can withstand up to 30 V drain‑source voltage.
It is rated for a continuous drain current of 7.0 A.
Yes, it has a built‑in ESD protection diode.
The device is offered in a small surface‑mount SOP‑8 package.