SH8K22 is a N-channel MOSFET produced by ROHM, which features a built-in G-S protection diode and a small surface mount package (SOP8).
The SH8K22 is a 4 V drive N‑channel MOSFET offered in a small SOP‑8 surface‑mount package. It features a built‑in gate‑source protection diode and is intended for power‑switching applications such as DC‑DC converters and inverters.
The document lists absolute maximum ratings, detailed electrical characteristics, typical transfer curves, and example measurement circuits. It also includes packaging details, storage conditions, and legal notices regarding use and distribution of the product information.
| Drain‑source voltage (VDS) max | 45 V |
|---|---|
| Gate‑source voltage (VGS) max | +20 V |
| Continuous drain current (ID) typ | 1 A |
| Total power dissipation (PD) per element | 1.4 W |
| Maximum junction temperature (Tj) | 150 °C |
| Storage temperature range | -55 °C to +150 °C |
The SH8K22 can withstand up to 45 V between drain and source.
Yes, it has a built‑in gate‑source protection diode.
The typical continuous drain current is 1 A.
The device can be stored from –55 °C up to +150 °C.