RU1C002UN is a Nch MOSFET launched by ROHM. It features low on-resistance and low voltage drive(1.2V drive). It is suitable for switching applications.
The RU1C002UN is a low‑on‑resistance, 1.2 V drive N‑channel MOSFET offered by ROHM. It is intended for general‑purpose electronic equipment such as audio‑visual, office‑automation, and communication devices.
The sheet lists absolute maximum ratings, thermal resistance, and detailed electrical characteristics, including a 20 V drain‑source rating, 200 mA continuous drain current, and typical on‑resistance around 1 mΩ. Packaging is supplied in tape‑and‑reel (type code TCL) with a basic ordering unit of 3000 pieces. The document also includes measurement circuit diagrams and usage notices.
| Drain‑source voltage (VDS) | 20 V |
|---|---|
| Gate‑source voltage (VGS) | +8 V |
| Continuous drain current (ID) | 200 mA |
| Pulsed drain current (ID,pulse) | 400 mA |
| Power dissipation (PD) | 150 mW |
| Channel temperature limit (TCH) | 150 °C |
| Storage temperature range | -55 °C to +150 °C |
| Thermal resistance (RθJA) | 833 °C/W |
| Typical on‑resistance (RDS(on)) | 1.0 mΩ (typ) |
The device is rated for a maximum drain‑source voltage of 20 V.
It is designed for low‑voltage drive, with a typical gate drive of 1.2 V.
The MOSFET is supplied in tape‑and‑reel (type code TCL) with a basic ordering unit of 3000 pieces.