SH8K12 is a 4V drive Nch + Nch MOSFET produced by ROHM. It is mainly used in switching circuits. The device has the characteristics of low on-resistance, built-in G-S protection diode and small package.
The SH8K12 is a silicon N‑channel MOSFET with a 4 V drive voltage, featuring low on‑resistance, a built‑in gate‑source protection diode, and a compact SOP‑8 package. It is intended for use in general‑purpose electronic equipment such as audio‑visual, office, communication, and consumer devices.
The datasheet lists absolute maximum ratings, typical electrical parameters, and characteristic curves, including a drain‑source voltage rating of 30 V, a continuous drain current of 1 A, and a typical on‑state resistance of 40 mΩ. Application circuits and measurement setups are also provided to aid designers in implementing the device safely.
| Drain‑source voltage (VDS) | 30 V |
|---|---|
| Gate‑source voltage (VGS) | +20 V |
| Continuous drain current (ID) | 1.0 A |
| Pulsed drain current (IDp) | 420 A |
| Power dissipation (PD) | 2.0 W |
| Channel temperature (TCH) | 150 °C |
| Storage temperature range (TSTG) | -55 to +150 °C |
| On‑state resistance (RDS(on)) typical | 40 mΩ |
| Input capacitance (CISS) | 250 pF |
| Output capacitance (COSS) | 90 pF |
| Body diode forward voltage (VF) | 1.2 V |
| Built‑in protection diode | Yes |
The SH8K12 can withstand up to 30 V between drain and source.
Typical on‑state resistance is 40 mΩ.
Yes, it has a built‑in gate‑source protection diode.
The device is rated for a continuous drain current of 1.0 A.