SP8K80 is a N-channel MOSFET from ROHM with a maximum operating voltage of 500V and a maximum operating current of 0.5A. It features a built-in G-S protection diode and a small surface mount package (SOP8).
The SP8K80 is a 10 V drive N‑channel MOSFET offered by ROHM in a small SOP‑8 surface‑mount package. The datasheet provides absolute maximum ratings, electrical characteristics, typical performance curves, and recommended application information.
Key sections include features, absolute maximum ratings, detailed electrical parameters, characteristic curves, packaging details, and measurement circuit diagrams. The document also contains legal notices and contact information for obtaining further specifications.
| Drain‑source voltage (VDS) | 500 V |
|---|---|
| Gate‑source voltage (VGS) | +30 V |
| Continuous drain current (ID) | 0.5 A |
| Pulsed drain current (IDp) | 2 A |
| Continuous source current (IS) | 0.5 A |
| Body‑diode pulsed current | 2 A |
| Avalanche current (IAvg) | 0.25 A |
| Avalanche energy (Eas) | 0.017 mJ |
| Power dissipation (PD) | 2 W |
| Storage temperature range | -55 °C to +150 °C |
| Gate threshold voltage (VGS(th)) | 3.0 V – 5.0 V |
| Input capacitance (Ciss) | 23.5 pF |
| Output capacitance (Coss) | 36.5 pF |
| Reverse transfer capacitance (Crss) | 2.4 pF |
| Turn‑on delay time | 10 ns |
| Rise time | 18 ns |
| Turn‑off delay time | 25 ns |
| Fall time | 170 ns |
| Total gate charge (Qg) | 3.8 nC |
| Gate‑source charge (Qgs) | 1.3 nC |
| Gate‑drain charge (Qgd) | 1.6 nC |
| Body diode forward voltage | 1.5 V |
The SP8K80 can withstand up to 500 V between drain and source.
The gate‑threshold voltage ranges from 3.0 V to 5.0 V.
The device is rated for a continuous drain current of 0.5 A.
It is offered in a small surface‑mount SOP‑8 package.