This is a datasheet, which details the information about SH8M24 product, including appearance structure, packaging size, function characteristics, application scenarios, typical application circuits, package code, internal circuit, maximum working conditions, pin diagram, electrical characteristics, etc.
The ROHM SH8M24 is a dual N‑channel and P‑channel MOSFET offered in an SOP‑8 surface‑mount package. The datasheet provides electrical characteristics, absolute maximum ratings, and packaging details for designers.
Key features include low on‑resistance, built‑in gate‑source protection diodes, and a compact SOP‑8 footprint, making it suitable for switching applications in audio‑visual, office‑automation, and communication equipment.
| Total power dissipation (Pd) | 20 W |
|---|---|
| Storage temperature range | -55 °C to +150 °C |
| Maximum junction temperature | 150 °C |
The device can be stored from –55 °C up to +150 °C.
The total power dissipation is limited to 20 W.