The document introduces a 4V drive low voltage MOSFET with low on-resistance, high power package, and low voltage drive. Suitable for switching applications.
The SH8M14 is a dual MOSFET (N‑channel and P‑channel) designed for low‑on‑resistance switching applications with a 4 V drive voltage. It features a high‑power SOP‑8 package and low on‑resistance, making it suitable for a variety of electronic circuits.
The document lists absolute maximum ratings, detailed electrical characteristics, typical output curves, and measurement circuit diagrams. It also includes packaging information, thermal resistance data, and a notice about usage limits and safety considerations.
| Drain‑source voltage (Vds) | 30 V |
|---|---|
| Gate‑source voltage (Vgs) | ±20 V |
| Power dissipation (Pd) | 20 W total |
| Channel temperature (Tch) | 150 °C |
| Storage temperature (Tstg) | -55 °C to +150 °C |
The maximum drain‑source voltage is 30 V.
The device is rated for 20 W total power dissipation.