This document introduces the 10V Drive Nch+Pch MOSFET SH8M70 from ROHM, including the product's structure, dimensions, features, and applications. The product features low on-resistance, built-in G-S protection diode, and a small surface mount package (SOP8), making it suitable for power switching and DC/DC converters.
The SH8M70 is a dual N‑channel and P‑channel MOSFET offered in a compact SOP8 surface‑mount package. It features low on‑resistance and a built‑in gate‑source protection diode for static‑discharge safety.
Typical applications include power switching and DC‑DC converters. The device is supplied in tape‑and‑reel packaging (2500 pieces per reel) and includes detailed electrical ratings, characteristic curves, and measurement circuit diagrams.
| Drain‑source voltage (VDS) | 250 V |
|---|---|
| Gate‑source voltage (VGS) | 30 V |
| Continuous drain current (ID) | 3.0 A |
| Total power dissipation | 2.0 W (total) |
| Input capacitance (CISS) | 180 pF |
| Output capacitance (COSS) | 70 pF |
| Storage temperature range | -55 °C to +150 °C |
The device can withstand up to 250 V between drain and source.
Yes, a built‑in protection diode is included between the gate and source terminals.
It is supplied in an SOP8 surface‑mount package, tape‑and‑reel with a basic ordering unit of 2500 pieces.
The typical total gate charge is 5.2 nC.