This document describes the features and applications of ROHM's 4V Drive Nch + Pch MOSFET SH8M41. The product features low on-resistance, built-in G-S protection diode, and small surface mount package (SOP8).
The SH8M41 is a dual N‑channel and P‑channel MOSFET offering low on‑resistance, a built‑in gate‑source protection diode, and a compact SOP8 surface‑mount package. It is intended for switching applications in audio‑visual, office‑automation, communication devices and other general‑use electronic equipment.
The document lists absolute maximum ratings, detailed electrical characteristics, typical output and transfer curves, and measurement circuit diagrams. It also includes packaging information, a notice on usage restrictions, and contact details for ROHM support.
| Drain‑source voltage (VDS) | 80 V |
|---|---|
| Gate‑source voltage (VGS) | 20 V |
| Continuous drain current (N‑channel) | 3.4 A |
| Continuous drain current (P‑channel) | 2.6 A |
| Power dissipation (PD) | 2 W |
| Maximum junction temperature (TCH) | 150 °C |
| Storage temperature range (TSTG) | -55 °C to +150 °C |
| Typical on‑resistance (N‑channel) | 110 mΩ |
| Typical on‑resistance (P‑channel) | 220 mΩ |
The SH8M41 can withstand up to 80 V drain‑source voltage.
The N‑channel device is rated for a continuous drain current of 3.4 A.
It is supplied in a small surface‑mount SOP8 package.
Yes, it features a built‑in gate‑source protection diode.