SH8M13 is a low voltage drive Nch + Pch MOSFET produced by ROHM. It has the following features: 1) low on-resistance; 2) built-in G-S protection diode; 3) small surface mount package (SOP8).
The SH8M13 is a dual N‑channel and P‑channel MOSFET offered in a small SOP‑8 surface‑mount package. It features low on‑resistance, a built‑in gate‑source protection diode, and is suitable for switching applications.
The document provides absolute maximum ratings, detailed electrical characteristics, typical output curves, and recommended measurement circuits. Packaging details and ordering information are also included.
| Drain‑source voltage (VDS) max | 30 V |
|---|---|
| Gate‑source voltage (VGS) max | ±20 V |
| Continuous drain current (ID) typical | 6.0 A |
| Pulsed drain current (IDp) max | 24 A |
| Power dissipation per element | 1.4 W |
| Storage temperature range | -55 °C to +150 °C |
| Maximum channel temperature | 150 °C |
| Built‑in G‑S protection diode | Yes |
The SH8M13 can withstand up to 30 V drain‑source voltage.
It is rated for a typical continuous drain current of 6.0 A.
Yes, the device has a built‑in G‑S protection diode.
The device dissipates 1.4 W per element.