2SK1165, 2SK1166 are high voltage, large current N-channel MOSFETs from Toshiba. They are suitable for switching regulators and DC-DC converters. They feature low on-resistance, high switching speed, low drive current and no secondary breakdown.
The Hitachi 2SK1165 and 2SK1166 are silicon N‑channel MOSFETs designed for high‑speed power switching. They feature low on‑resistance, low drive current requirements and are suitable for switching regulators and DC‑DC converters.
The document provides absolute maximum ratings, detailed electrical characteristics, thermal derating curves, typical output and transfer characteristics, capacitance data, and switching time specifications, along with legal cautions and contact information for Hitachi semiconductor sales offices.
| Drain‑to‑source voltage (VDSS) | 450 V (2SK1165), 500 V (2SK1166) |
|---|---|
| Gate‑to‑source voltage (VGSS) | ‑30 V |
| Drain current (ID) | 12 A |
| On‑state resistance (RDS(on)) | 0.40‑0.55 Ω (2SK1165), 0.45‑0.60 Ω (2SK1166) |
| Input capacitance (Ciss) | 1450 pF |
| Output capacitance (Coss) | 410 pF |
The 2SK1165 can withstand up to 450 V drain‑to‑source voltage.
The gate‑to‑source breakdown voltage is –30 V.
The input capacitance (Ciss) is specified as 1450 pF.