2SK1298 is a low on-resistance, high speed switching, low drive current silicon N-channel MOSFET, suitable for motor drive, DC-DC converter, power switch and solenoid drive.
The 2SK1298 is a silicon N‑channel MOSFET designed for high‑speed power switching applications such as motor drives, DC‑DC converters, power switches, and solenoid drives. It offers low on‑resistance, fast switching, and low drive current requirements.
The datasheet provides absolute maximum ratings, detailed electrical characteristics, thermal derating curves, and cautions for proper use. It also includes package information (TO‑3PFM) and contact details for Hitachi Semiconductor worldwide.
| Drain‑to‑Source Voltage (VDS) | 60 V |
|---|---|
| Gate‑to‑Source Voltage (VGS) | +20 V |
| Continuous Drain Current (ID) | 40 A |
| Peak Drain Current (ID(p)) | 160 A |
| On‑Resistance (RDS(on)) Typical | 0.015 Ω |
| Input Capacitance (CISS) | 3600 pF |
| Output Capacitance (COSS) | 1850 pF |
| Reverse Transfer Capacitance (CRSS) | 450 pF |
| Turn‑on Delay (tON) | 30 ns |
| Rise Time (tr) | 170 ns |
| Turn‑off Delay (tOFF) | 700 ns |
| Body‑to‑Drain Diode Forward Voltage | 1.2 V |
| Body‑to‑Drain Diode Reverse Recovery Time | 155 ns |
The device can withstand up to 60 V between drain and source.
Typical RDS(on) is 0.015 Ω at a drain current of 20 A and VGS = 10 V.
The gate can be driven up to +20 V relative to the source.
The MOSFET is rated for a continuous drain current of 40 A.