Hitachi 2SK1296 Silicon N-Channel MOS FET Datasheet

2SK1296 is a high-speed power switch with low on-resistance, high switching speed and low drive current. It can be driven from a 5V source and is suitable for motor drive, DC-DC converter, power switch and solenoid drive.


Hitachi 2SK1296 Silicon N-Channel MOS FET Datasheet - cover page
Brand
Hitachi
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
7
File format
PDF
File size
38 KB
Published
01 June, 2012
Updated
30 September, 2023
MD5 checksum
B861A55914E1072709E47A22595514AB

About this manual

The 2SK1296 MOSFET is designed for high‑speed power switching applications such as motor drives, DC‑DC converters, and solenoid drivers. It features low on‑resistance, low drive current, and can be driven directly from a 5 V source.

Key specifications include a maximum drain‑source voltage of 60 V, continuous drain current of 30 A, typical on‑state resistance of 0.024 Ω, and input/output capacitances of 2250 pF and 1230 pF respectively. Thermal derating and switching characteristics are provided for various operating conditions.

What's inside

  • Application
  • Features
  • Absolute Maximum Ratings
  • Electrical Characteristics
  • Power vs. Temperature Derating
  • Switching Characteristics
  • Thermal Impedance
  • Test Circuit

Specifications

Drain‑to‑source voltage (VDS)60 V
Gate‑to‑source voltage (VGS)+20 V
Continuous drain current (ID)30 A
Input capacitance (CISS)2250 pF
Output capacitance (COSS)1230 pF

Frequently asked questions

What is the maximum drain‑to‑source voltage?

The device is rated for a maximum drain‑to‑source voltage of 60 V.

What is the maximum continuous drain current?

The MOSFET can handle a continuous drain current of 30 A.

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