2SK1169, 2SK1170 are two high-voltage power switching N-channel MOSFETs with low on-resistance, high switching speed, low drive current, no secondary breakdown, etc., suitable for switching regulators and DC-DC converters.
This datasheet provides the key specifications for the Hitachi 2SK1169 and 2SK1170 silicon N‑channel MOSFETs. It covers absolute maximum ratings, detailed electrical characteristics, power‑vs‑temperature derating, and switching performance.
The document also includes application notes, typical characteristic curves, and cautions regarding proper use, temperature limits, and intellectual‑property considerations.
| Drain‑to‑Source Voltage (VDS) | 450 V (2SK1169), 500 V (2SK1170) |
|---|---|
| Gate‑to‑Source Voltage (VGS) | –30 V |
| Drain Current (ID) | 20 A continuous, 180 A pulse |
| Input Capacitance (Ciss) | ≈2800 pF |
| Output Capacitance (Coss) | ≈780 pF |
| Reverse Recovery Time (trr) | ≈500 ns |
| Maximum Channel Temperature (Tch) | 150 °C |
| Storage Temperature Range | –55 °C to +150 °C |
The 2SK1169 is rated for a maximum drain‑to‑source voltage of 450 V.
They can be stored from –55 °C up to +150 °C.
Yes, the document advises contacting Hitachi’s sales office for applications requiring especially high reliability, such as aerospace or medical life‑support equipment.