2SK1254(L) and 2SK1254(S) are N-channel MOSFETs suitable for high-speed power switching applications. Their features include low on-resistance, high switching speed, and 4V gate drive capability (can be driven from a 5V source). They are suitable for motor drive, DC-DC converter, power switch and solenoid drive applications.
The 2SK1254(L) and 2SK1254(S) are silicon N‑Channel MOSFETs designed for high‑speed power switching. They are suitable for motor drives, DC‑DC converters, power switches and solenoid drives.
The document lists absolute maximum ratings, detailed electrical parameters such as on‑state resistance, capacitances, and thermal derating curves, as well as cautions for proper use and handling.
| Drain to source voltage (V_DSS) | 120 V |
|---|---|
| Gate to source voltage (V_GSS) | +20 V |
| Drain current (I_D) | 3 A |
| Input capacitance (C_iss) | 420 pF |
| Output capacitance (C_oss) | 190 pF |
The device is rated for a maximum drain‑to‑source voltage of 120 V.
They are suitable for high‑speed power switching, motor drive, DC‑DC converters, power switches and solenoid drives.