2SK1161, 2SK1162 are N-channel MOSFETs with low on-resistance, high switching speed, low drive current, and no secondary breakdown. They are suitable for switching regulator and DC-DC converter.
The 2SK1161 and 2SK1162 are silicon N‑Channel MOSFETs designed for high‑speed power switching applications such as switching regulators and DC‑DC converters. They feature low on‑resistance, low drive current, and no secondary breakdown, making them suitable for demanding power‑switching circuits.
The datasheet lists absolute maximum ratings, detailed electrical characteristics, thermal derating curves, and cautions regarding usage limits, storage temperatures, and non‑radiation‑resistant design. It also includes contact information for Hitachi Semiconductor worldwide.
| Drain‑to‑source voltage (VDS) 2SK1161 | 450 V |
|---|---|
| Drain‑to‑source voltage (VDS) 2SK1162 | 500 V |
| Gate‑to‑source voltage (VGS) | +30 V |
| Continuous drain current (ID) | 10 A |
| Peak drain current (ID,peak) | 30 A |
| On‑state resistance (RDS(on)) typical 2SK1161 | 0.6 Ω |
| Input capacitance (Ciss) | 1050 pF |
| Output capacitance (Coss) | 280 pF |
| Turn‑on delay time (tON) | 15 ns |
| Storage temperature range | -55 °C to +150 °C |
The 2SK1161 is rated for a maximum drain‑to‑source voltage of 450 V.
No, the product is not designed to be radiation resistant.
They can be stored from –55 °C up to +150 °C.