2SK1163, 2SK1164 is a high voltage and high current N-channel MOSFET device produced by Toshiba. It is suitable for switching power supplies and DC-DC converters.
The 2SK1163 and 2SK1164 MOSFETs are designed for high‑speed power‑switching applications such as switching regulators and DC‑DC converters. They feature low on‑resistance, low drive current, and no secondary breakdown, making them suitable for demanding power‑electronics designs.
Key specifications include drain‑source voltages of 450 V (2SK1163) and 500 V (2SK1164), a typical on‑state resistance of about 0.55 Ω–0.60 Ω, and a maximum channel dissipation of 100 W. The datasheet also provides electrical characteristics, thermal derating curves, and cautions about operating limits and intellectual‑property rights.
| Gate‑to‑source voltage (VGS) | +30 V |
|---|---|
| Drain current (ID) | 11 A |
| Channel dissipation (PCH) | 100 W |
| Storage temperature range | -55 °C to +150 °C |
| On‑state resistance (RDS(on)) 2SK1163 (typ) | 0.55 Ω |
| On‑state resistance (RDS(on)) 2SK1164 (typ) | 0.60 Ω |
| Input capacitance (CISS) | 1150 pF |
| Output capacitance (COSS) | 340 pF |
| Turn‑on delay time | 17 ns |
| Rise time | 60 ns |
| Turn‑off delay time | 95 ns |
| Body‑to‑drain diode forward voltage | 1.0 V |
The typical on‑state resistance of the 2SK1163 is about 0.55 Ω.
They can be stored from –55 °C up to +150 °C.
Contact Hitachi’s sales office; contact information is provided in the document.