2SK1159, 2SK1160 is a high voltage switching tube produced by Mitsubishi Electric. It has the characteristics of low on-resistance, high switching speed, low drive current and no secondary breakdown. It is suitable for switching regulators, DC-DC converters and motor drivers.
The Hitachi 2SK1159 and 2SK1160 are silicon N‑channel MOSFETs designed for high‑speed power‑switching applications such as switching regulators, DC‑DC converters and motor drivers. The document provides key specifications, absolute maximum ratings, and typical performance curves.
Technical details include on‑resistance, capacitances, switching times, thermal impedance and recommended operating limits. Cautionary notes address licensing, reliability considerations and usage restrictions for safety‑critical applications.
| Drain‑to‑source voltage (VDS) | 450 V (2SK1159), 500 V (2SK1160) |
|---|---|
| Gate‑to‑source voltage (VGS) | +30 V |
| Continuous drain current (ID) | 8 A |
| Peak drain current (ID,peak) | 32 A |
| Body‑to‑drain diode reverse current | 8 A |
| Channel dissipation (PD) | 60 W |
| Maximum junction temperature (TJ) | 150 °C |
| Storage temperature range | -55 °C to +150 °C |
| Input capacitance (Ciss) | 1150 pF |
| Output capacitance (Coss) | 340 pF |
| Reverse transfer capacitance (Crss) | 55 pF |
| Turn‑on delay time | 17 ns |
| Rise time | 55 ns |
| Turn‑off delay time | 100 ns |
| Fall time | 45 ns |
| Body‑to‑drain diode forward voltage | 0.9 V |
The 2SK1159 is rated for a maximum drain‑to‑source voltage of 450 V.
The device should be used with a duty cycle of less than 1 % for pulse operation.
Yes, the datasheet lists high‑speed switching as an application and highlights low on‑resistance and fast switching characteristics.
Typical on‑resistance (RDS(on)) for the 2SK1159 is 0.55 Ω.