2SD2457 is a silicon NPN epitaxial planer type transistor from Sanyo Electric, Japan. It is mainly used for low-frequency power amplification. This transistor has high collector to emitter voltage VCEO and large collector power dissipation PC. It adopts a Mini Power package, allowing the equipment to be downsized and automatically inserted through the tape packing and the magazine packing.
The 2SD2457 is a silicon NPN epitaxial planar transistor designed for low‑frequency power amplification. It features a high collector‑to‑emitter voltage rating, large collector power dissipation and a compact Mini Power Type Package suitable for automated assembly.
The document provides absolute maximum ratings, electrical characteristics, marking information and important usage precautions, including export requirements and recommended storage conditions.
| Junction temperature (Tj) | 150 °C |
|---|---|
| Storage temperature range | -55 °C to +150 °C |
| Package type | Mini Power Type Package |
| Marking symbol | 1Y |
Yes, an export permit must be obtained from the competent authorities of the Japanese Government before exporting the product.
The recommended storage temperature range is –55 °C to +150 °C.
It is supplied in a Mini Power Type Package.
The maximum junction temperature is 150 °C.