2SK0065 (2SK65) is a low noise silicon N-channel junction field effect transistor produced by SANYO Electric, used for low frequency impedance conversion and electret capacitor microphone.
The 2SK0065 silicon N‑Channel junction FET is intended for low‑frequency impedance conversion and electret capacitor microphone applications. Key features include a diode between gate and source, low noise voltage, and defined maximum ratings such as 12 V drain‑source voltage and 2 mA drain current.
The document also contains legal and export notices, stating that an export permit is required under Japanese law and that the specifications are subject to change. Users are advised to verify the latest product standards before final design or purchase.
| Drain to Source Voltage (VDS) max | 12 V |
|---|---|
| Gate to Drain Voltage (VGD) max | -12 V |
| Drain to Source Current (ID) max | 2 mA |
| Gate to Source Current (IGS) max | 2 mA |
| Drain to Gate Current (IDG) max | 2 mA |
| Allowable Power Dissipation (PD) max | 20 mW |
| Operating Ambient Temperature range | -10 to +70 °C |
| Storage Temperature range | -20 to +150 °C |
| Drain to Source cut‑off current (typ) | 0.04 mA |
| Noise figure | 4 pV |
| Voltage gain (typ) | 9.5 dB |
The maximum drain‑to‑source voltage is 12 V.
It can operate from –10 °C to +70 °C ambient temperature.
The device can dissipate up to 20 mW.
Yes, an export permit is required from Japanese authorities for this product.