Panasonic 2SK1104 Silicon N-Channel Junction FET Datasheet

2SK1104 is a N-channel junction field-effect transistor produced by Toshiba. It has low on-resistance and low-noise characteristics


Panasonic 2SK1104 Silicon N-Channel Junction FET Datasheet - cover page
Brand
Panasonic
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
2
File format
PDF
File size
27 KB
Published
01 June, 2012
Updated
30 September, 2023
MD5 checksum
2FA64E5DEE225F4BA3B7CD2796CDFC50

About this manual

The 2SK1104 is a small‑signal silicon N‑channel junction field‑effect transistor (JFET) intended for switching applications. It offers low ON‑resistance and low‑noise performance.

Key specifications include a maximum gate‑to‑drain voltage of –65 V, drain current up to 20 mA, and a typical ON‑resistance of 250 mΩ. The device is supplied in an S‑type package and operates over a storage temperature range of –55 °C to +150 °C.

What's inside

  • Features
  • Absolute Maximum Ratings
  • Electrical Characteristics
  • Package Information
  • Typical Characteristics Graph
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