This document describes the features and characteristics of the 2SK601 Silicon N-Channel MOS FET, including low ON-resistance, high-speed switching, and direct drivability by CMOS and TTL. The product is suitable for switching applications and offers a mini-power type package for downsizing and automatic insertion.
The 2SK601 is a small‑signal silicon N‑Channel MOSFET designed for switching applications. It can be driven directly by CMOS and TTL logic and is offered in a mini‑power 3‑pin package for compact designs.
Key features include an 80 V drain‑source voltage, low ON‑resistance, fast turn‑on and turn‑off times (15 ns / 20 ns), and a maximum drain current of 1 A. The device is suitable for use in low‑power circuits where size and speed are critical.
| Drain to Source Voltage (Vds) | 80 V |
|---|---|
| Gate to Source Voltage (Vgs) | 20 V |
| Maximum Drain Current (Id) | 1 A |
| Turn‑off Time (t_off) | 20 ns |
The device is rated for a maximum drain‑source voltage of 80 V.
It is supplied in a mini‑power 3‑pin package.