The 2SK0664 (2SK664) is a high performance silicon N-channel MOSFET for switching applications. This device features high switching speed and S-mini type package for downsizing of the sets and automatic insertion through the tape/magazine packing.
The 2SK0664 is a small‑signal N‑channel MOSFET offered in an S‑mini (SC‑70) package, suitable for high‑speed switching and space‑constrained designs. Key features include a 50 V drain‑source breakdown voltage, low on‑resistance, and fast turn‑on/turn‑off times.
The datasheet provides absolute maximum ratings, detailed electrical characteristics such as drain current, power dissipation, capacitances, and recommended operating conditions. Legal and export notices are also included for proper use of the semiconductor material.
| Drain to Source breakdown voltage (Vdss) | 50 V |
|---|---|
| Gate to Source voltage (Vgs) | 8 V |
| Drain current (Id) (typical) | 100 mA |
| Maximum drain current (Idmax) | 200 mA |
| Allowable power dissipation (Pd) | 150 mW |
| Channel temperature (Tj) | 150 °C |
| Storage temperature range | -55 °C to +150 °C |
| Input capacitance (Ciss) | 15 pF |
| Reverse transfer capacitance (Crss) | 1 pF |
| Package type | S‑mini (SC‑70) |
The maximum drain current is 200 mA.
It is supplied in an S‑mini (SC‑70) package.
The device can be stored from –55 °C to +150 °C.