panasonic 2SK0198 (2SK198) Silicon N-Channel Junction FET Manual

2SK0198 is a N-channel junction field effect transistor produced by Panasonic. It has high mutual conductance and low noise characteristics. It adopts mini type package, which can realize miniaturization and automatic insertion.


panasonic 2SK0198 (2SK198) Silicon N-Channel Junction FET Manual - cover page
Brand
Panasonic
Category
electronic components
Document type
Datasheet
Language
English
Pages
3
File format
PDF
File size
42 KB
Published
01 June, 2012
Updated
01 October, 2023
MD5 checksum
B251F94405FBB29089E4CDA9B431E10D

About this manual

The 2SK0198 is a small‑signal silicon N‑channel junction field‑effect transistor designed for low‑frequency amplification. It features a mini‑type package suitable for automatic insertion and provides high mutual conductance with low noise performance.

The datasheet lists absolute maximum ratings, electrical characteristics, and recommended operating conditions, along with export and usage precautions for standard electronic equipment applications.

What's inside

  • Features
  • Absolute Maximum Ratings
  • Electrical Characteristics
  • Packaging
  • Precautions and Export Information

Specifications

Drain to Source Voltage (VDS)30 V
Gate to Drain Voltage (VGD)-30 V
Drain Current (ID)20 mA
Gate Current (IG)10 mA
Allowable Power Dissipation (PD)150 mW
Channel Temperature (Tj)150 °C
Storage Temperature (Tstg)-55 to +150 °C
Mutual Conductance (gm)4 mS
Noise Figure (NF)60 mV

Frequently asked questions

What is the maximum drain‑to‑source voltage for the 2SK0198?

The maximum drain‑to‑source voltage is 30 V.

How much power can the device dissipate safely?

The allowable power dissipation is 150 mW.

What are the storage temperature limits for this FET?

It can be stored from –55 °C up to +150 °C.

What is the typical mutual conductance of the device?

Typical mutual conductance is 4 mS.

Download PDF (42 KB)

More Panasonic Manuals


View all Panasonic manuals →