panasonic 2SK0301 (2SK301) Silicon N-Channel Junction FET Manual

2SK0301 (2SK301) is a silicon N-channel junction field effect transistor produced by Panasonic. It features low noise, high gain, high gate to drain voltage VGDO, etc. It is mainly used in low frequency amplification and switching circuits.


panasonic 2SK0301 (2SK301) Silicon N-Channel Junction FET Manual - cover page
Brand
Panasonic
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
3
File format
PDF
File size
68 KB
Published
01 June, 2012
Updated
30 September, 2023
MD5 checksum
E1D333B9F5C4CB08E6526C8D50289EA4

About this manual

The 2SK0301 is a small‑signal silicon N‑channel junction FET designed for low‑frequency amplification and switching applications. It offers a high gate‑to‑drain voltage rating of 55 V and a maximum drain current of 30 mA, making it suitable for standard electronic equipment such as office and communications devices.

The datasheet provides absolute maximum ratings, electrical characteristics, and typical performance graphs. Users are reminded to observe export regulations and to verify the latest specifications before final design, as product details may change without notice.

What's inside

  • Features
  • Absolute Maximum Ratings
  • Electrical Characteristics
  • Typical Characteristics Graphs
  • Application Notes
  • Export and Use Precautions

Specifications

Drain to Source Voltage (VDS)55 V
Gate to Drain Voltage (VGD)55 V
Drain Current (ID)30 mA
Gate Current (IG)10 mA
Power Dissipation (PD)250 mW
Junction Temperature (Tj)125 °C
Storage Temperature Range-55 °C to +125 °C

Frequently asked questions

What is the maximum drain‑to‑source voltage for the 2SK0301?

The maximum drain‑to‑source voltage is 55 V.

What is the recommended operating temperature range?

The device can be stored from –55 °C to +125 °C, and typical ambient operation is up to 125 °C.

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