2SK1103 is a N-channel silicon junction field effect transistor manufactured by Toshiba Corporation. Its features are low on-resistance and low noise characteristics.
The 2SK1103 is a silicon N‑channel junction field‑effect transistor intended for low‑power switching applications. It offers low ON‑resistance and low‑noise performance, making it suitable for small‑signal circuits.
Key specifications include a maximum gate‑to‑drain voltage of 65 V, a drain current rating of 20 mA, and a low input capacitance of 7 pF. The device is packaged in a TO‑236 (SC‑59) case and can operate from –55 °C to +150 °C storage temperature.
| Gate to Drain voltage (Vgd) rating | 65 V |
|---|---|
| Drain current (Id) rating | 20 mA |
| Gate current (Ig) rating | 10 mA |
| Allowable power dissipation | 150 mW |
| Storage temperature range | -55 °C to +150 °C |
| Channel temperature limit | 150 °C |
| Input capacitance (Ciss) | 7 pF |
| Reverse transfer capacitance (Crss) | 15 pF |
The device can tolerate up to 65 V between gate and drain.
The maximum drain current is specified as 20 mA.
It can be stored from –55 °C up to +150 °C.