2SK0662 is a N-channel silicon junction field effect transistor produced by Toshiba. It is mainly used for low-frequency amplification and has the characteristics of high mutual conductance and low noise.
The 2SK0662 silicon N‑channel junction FET is designed for low‑frequency amplification. It offers high mutual conductance, low noise performance, and a compact S‑mini package suitable for tape‑and‑reel mounting.
The datasheet includes absolute maximum ratings, electrical characteristics, and recommended handling precautions, including export permit requirements for certain applications.
| Drain to Source Voltage (VDS) | 30 V |
|---|---|
| Gate to Drain Voltage (VGD) | -30 V |
| Drain Current (ID) | 20 mA |
| Gate Current (IG) | 10 mA |
| Power Dissipation (PD) | 150 mW |
| Junction Temperature (Tj) | 125 °C |
| Storage Temperature | -55 to +125 °C |
The maximum drain‑source voltage is 30 V.
Store the device between –55 °C and +125 °C.
Yes, an export permit is required from Japanese authorities for certain applications.
Standard applications include office equipment, communications equipment, measuring instruments and household appliances.