The 2SK0615(2SK615) is a low voltage small signal MOSFET from Toshiba Semiconductor. It features a low ON-resistance, high-speed switching, can be driven directly by CMOS and TTL, and is available in an M-type package.
The 2SK0615 (also listed as 2SK615) is a silicon N‑channel MOSFET intended for switching applications. It features a low ON‑resistance, high‑speed switching, and can be driven directly by CMOS or TTL logic.
The datasheet provides absolute maximum ratings, electrical characteristics, package information, and legal/export notices. It is suitable for standard electronic equipment such as office, communications, measurement, and household devices.
| Drain to Source Voltage (VDS) | 80 V |
|---|---|
| Gate to Source Voltage (VGS) | 20 V |
| Drain Current (ID) | 2.05 A |
| Maximum Drain Current (IDmax) | 1 A |
| Power Dissipation (PD) | 1 W |
| Turn‑on Time | 15 ns |
| Turn‑off Time | 20 ns |
| Storage Temperature | -55 °C to +150 °C |
| Package Type | M‑type |
The maximum drain‑to‑source voltage is 80 V.
The turn‑on time is 15 ns and the turn‑off time is 20 ns.
It is supplied in an M‑type package suitable for automatic and manual insertion.
Yes, an export permit from the Japanese government is required for exporting the product.