2SK0614 is a low voltage small power N-channel MOSFET with low RDS(on), high switching speed and can be directly driven by CMOS and TTL.
The 2SK0614 is a silicon N‑channel MOSFET designed for switching applications. It can be driven directly by CMOS and TTL logic levels and offers low ON‑resistance for efficient operation.
The datasheet provides absolute maximum ratings, detailed electrical characteristics, allowable power dissipation, and handling precautions. It also includes notes on export restrictions and recommended design practices for reliable use in standard electronic equipment.
| Drain to Source Voltage (VDS) | 80 V |
|---|---|
| Gate to Source Voltage (VGS) | 20 V |
| Drain Current (ID) | 0.5 A |
| Maximum Drain Current (IDmax) | 1 A |
| Allowable Power Dissipation (PD) | 750 mW |
| Storage Temperature Range | -55 °C to +150 °C |
The device is rated for a maximum drain‑to‑source voltage of 80 V.
The allowable power dissipation is 750 mW.
It can be stored from –55 °C up to +150 °C.
Yes, it can be driven directly by CMOS and TTL.