This document describes the features and characteristics of the 2SK0620 (2SK620) Silicon N-Channel MOS FET, including high-speed switching and mini-type package.
This document describes the Panasonic 2SK0620 (also listed as 2SK620), a small‑signal N‑channel MOSFET. It highlights key features such as high‑speed switching, a mini‑type 3‑pin package, and suitability for downsized electronic assemblies.
The datasheet lists absolute maximum ratings, detailed electrical characteristics, and mechanical dimensions, and includes legal and export notices. It is intended for designers of standard electronic equipment and provides guidance on safe operating limits and recommended design practices.
| Drain‑to‑Source breakdown voltage (V_DSS) | 50 V |
|---|---|
| Gate‑to‑Source voltage (V_GS) | 8 V |
| Maximum drain current (I_D max) | 200 mA |
| Continuous drain current (I_D) | 100 mA |
| Allowable power dissipation (P_D) | 150 mW |
| Storage temperature range | -55 °C to +150 °C |
| Maximum junction temperature (Tj) | 150 °C |
| Input capacitance (Ciss) | 15 pF |
The maximum drain current is 200 mA.
Store the device between –55 °C and +150 °C.