This document describes the features and characteristics of a Silicon MOS FETs (Small Signal) product, including high-speed switching, wide frequency band, and built-in gate protection-diode.
The 2SK1228 is a small‑signal N‑channel MOSFET designed for high‑speed switching and wide frequency operation. It features a built‑in gate protection diode and can be driven with as low as 2.5 V.
The datasheet lists absolute maximum ratings, detailed electrical characteristics, and package information (TO‑236, SC‑59). Key parameters such as drain‑source voltage, gate‑source voltage, and on‑resistance are provided for design reference.
| Drain‑to‑Source Voltage (VDS) | 50 V |
|---|---|
| Gate‑to‑Source Voltage (VGS) | 10 V |
| Drain Current (ID) | 50 mA |
| Maximum Drain Current (IDmax) | 100 mA |
| Power Dissipation (PD) | 150 mW |
| Channel Temperature (Tj) | 150 °C |
| Storage Temperature | -55 °C to +150 °C |
| Input Capacitance (Ciss) | 45 pF |
| Reverse Transfer Capacitance (Crss) | 12 pF |
The maximum drain current is 100 mA.
The device can be driven with as low as 2.5 V, and the gate‑to‑source voltage rating is 10 V.