This document describes the features and characteristics of the 2SK0657 (2SK657) Silicon N-Channel MOS FET, including high-speed switching and easy installation and fixing.
The document describes the Panasonic 2SK0657 (also known as 2SK657) small‑signal N‑channel MOSFET. It lists key features such as high‑speed switching, an M‑Al package suitable for automatic and manual insertion, and the typical electrical parameters for design use.
Detailed specifications include absolute maximum ratings, electrical characteristics, and typical performance curves. The final pages contain legal and export notices, advising users to obtain export permits from Japanese authorities and to verify the latest product specifications before final design.
| Drain to Source breakdown voltage (Vdss) | 50 V |
|---|---|
| Gate to Source voltage (Vgs) | 8 V |
| Drain current (Id) (typical) | 100 mA |
| Maximum drain current (Id max) | 200 mA |
| Allowable power dissipation (Pd) | 400 mW |
| Channel (junction) temperature limit (Tj) | 150 °C |
The maximum drain current is 200 mA.
It is supplied in an M‑Al (SC‑71) package.
Yes, an export permit from the Japanese government is required for exporting the product.