This document describes the features and characteristics of the 2SB950 and 2SB950A power transistors, including high forward current transfer ratio hFE, high-speed switching, and full-pack package. These transistors are designed for power amplification and switching, and are complementary to 2SD1276 and 2SD1276A.
The 2SB950 and 2SB950A transistors are designed for power amplification and switching applications. They feature a high forward current transfer ratio, fast‑speed switching, and a TO‑220 full‑pack package that can be mounted to a heat sink with a single screw.
The datasheet provides absolute maximum ratings, electrical characteristics, and safe operating area curves. Key parameters include collector‑emitter voltage, collector current, power dissipation, transition frequency, and temperature limits.
| Collector‑Emitter Voltage (VCEO) | -60 V (2SB950) / -80 V (2SB950A) |
|---|---|
| Maximum Collector Current (IC) | 4 A (typical) |
| Collector Power Dissipation (PD) | 40 W at 25 °C |
| Junction Temperature (Tj) | 150 °C |
| Storage Temperature Range | -55 °C to +150 °C |
| Package Type | TO‑220 Full Pack |
The 2SB950 has a maximum collector‑emitter voltage of -60 V, while the 2SB950A is rated at -80 V.
The datasheet lists a typical maximum collector current of 4 A.
Both devices are supplied in a TO‑220 full‑pack package.