FQP3N50C/FQPF3N50C 500V N-Channel MOSFET is a N-channel enhancement mode power field effect transistor produced by Fairchild. It features low gate charge (typical 10 nC), low Crss (typical 8.5 pF), fast switching and 100% avalanche tested. This device is well suited for high efficiency switched mode power supplies, active power factor correction and electronic lamp ballasts based on half bridge topology.
The Fairchild FQP3N50C and FQPF3N50C are 500 V N‑Channel enhancement‑mode MOSFETs designed for high‑efficiency switched‑mode power supplies, active power factor correction, and lamp ballast applications. They feature low gate charge (≈10 nC), low output capacitance (≈8.5 pF), and fast switching performance.
The datasheet provides absolute maximum ratings, thermal characteristics, package information (TO‑220 and TO‑220F), detailed electrical characteristics, typical performance curves, and mechanical dimensions. It also includes trademark, disclaimer, and product status information.
| Drain‑Source Voltage (VDS) | 500 V |
|---|---|
| Gate‑Source Voltage (VGS) | +30 V |
| Single‑Pulse Avalanche Energy | 200 mJ |
The gate‑source voltage rating is +30 V.