FQP45N15V2/FQPF45N15V2 is a 150V N-channel enhancement mode power field effect transistor produced by Fairchild. This device has low on-state resistance, fast switching speed and high breakdown voltage, and is suitable for DC/DC converters, synchronous rectifiers and other applications where low Rds(on) is required.
The FQP45N15V2 and FQPF45N15V2 are N‑Channel enhancement mode power MOSFETs designed for low on‑state resistance, fast switching, and high‑energy pulse handling. They are built with Fairchild's planar stripe DMOS technology, offering low gate charge and low output capacitance.
The datasheet lists absolute maximum ratings, thermal characteristics, and detailed electrical parameters such as drain‑source voltage, continuous and pulsed drain current, gate‑source voltage, and power dissipation. Package information for TO‑220 and TO‑220F variants, as well as trademark and product status details, are also included.
| Drain‑Source Voltage (VDS) | 150 V |
|---|---|
| Gate‑Source Voltage (VGS) | ±30 V |
| Junction‑to‑Case Thermal Resistance (RθJC) | 0.68 °C·W |
The device is rated for a maximum drain‑source voltage of 150 V.
Yes, the MOSFET is 100 % avalanche tested.