FQP45N15V2/FQPF45N15V2 is a 150V N-channel MOSFET produced by Fairchild. It uses Fairchild's proprietary planar stripe DMOS technology and has low on-state resistance, superior switching performance and high energy pulse tolerance. It is suitable for DC to DC converters, synchronous rectification and other applications where the lowest Rds(on) is required.
The Fairchild FQP45N15V2 and FQPF45N15V2 are N‑Channel enhancement‑mode power MOSFETs designed for low on‑state resistance, fast switching and high‑energy pulse capability. They are suited for DC‑DC converters, synchronous rectifiers and other applications requiring low RDS(on) and robust avalanche performance.
The document provides absolute maximum ratings, thermal characteristics, detailed electrical parameters, typical characteristic curves, and mechanical package dimensions for both the TO‑220 and TO‑220F variants. It also includes test circuit diagrams for gate charge and diode recovery measurements, as well as trademark and product status information.
| Drain‑Source Voltage (VDS) | 150 V |
|---|---|
| Continuous Drain Current (ID) @ 25 °C | 45 A |
| Pulsed Drain Current (ID) @ 25 °C | 180 A |
| Gate‑Source Voltage (VGS) | ±30 V |
| Power Dissipation (PD) @ 25 °C | 220 W |
| Junction‑to‑Case Thermal Resistance (RθJC) | 0.68 °C·W |
The device is rated for a maximum drain‑source voltage of 150 V.
It can conduct up to 45 A continuously at a case temperature of 25 °C.
Yes, the device is 100 % avalanche tested and includes avalanche energy specifications.