This is a 600V N-channel MOSFET from Fairchild with a maximum current of 2.0A. Its RDS(on) is only 3.6Ω, low gate charge, low Crss, fast switching, 100% avalanche tested, and improved dv/dt capability.
The FQPF3N60 is a 600 V N‑Channel enhancement mode power MOSFET fabricated with Fairchild's planar stripe DMOS technology. It is designed for high‑efficiency switch‑mode power supplies, offering low on‑state resistance, fast switching, and robust avalanche capability.
The document includes absolute maximum ratings, electrical and thermal characteristics, typical performance curves, and package dimensions for the TO‑220F case. It also contains trademark, disclaimer, and product status information from Fairchild Semiconductor.
| Drain‑Source Voltage (V_DSS) | 600 V |
|---|---|
| Continuous Drain Current (I_D) at 25 °C | 2.0 A |
| Pulsed Drain Current | 8.0 A |
| Gate‑Source Voltage (V_GS) | +30 V |
| Power Dissipation (P_D) at 25 °C | 34 W |
| Thermal Resistance, Junction‑to‑Case (RθJC) | 3.68 °C/W |
| Total Gate Charge (Q_G) | 10 nC (typical) |
| Package | TO‑220F |
The device can handle a continuous drain current of 2.0 A at a case temperature of 25 °C.
The typical total gate charge is 10 nC.
It is supplied in a TO‑220F package.
The single‑pulse avalanche energy is rated at 200 mJ.