FQP3N80C/FQPF3N80C is a 800V N-Channel MOSFET power field effect transistor produced using Fairchild's proprietary DMOS technology. It features low on-state resistance, superior switching performance, and high energy pulse withstand capability, making it suitable for high efficiency switch mode power supplies.
The FQP3N80C and FQPF3N80C are 800 V N‑Channel enhancement mode power MOSFETs built with Fairchild's planar stripe DMOS technology. They are designed for low on‑state resistance, fast switching, and high‑energy pulse handling, making them suitable for efficient switch‑mode power supplies.
Key specifications include a maximum drain‑source voltage of 800 V, continuous drain current of 3 A, pulsed drain current of 12 A, typical gate charge of 13 nC, and low input capacitance. The devices are offered in TO‑220 and TO‑220F packages and operate over a temperature range of –55 °C to +150 °C.
| Drain‑Source Voltage (VDS) | 800 V |
|---|---|
| Continuous Drain Current (ID) at 25 °C | 3 A |
| Pulsed Drain Current (ID) (Note 1) | 12 A |
| Typical Gate Charge (Qg) | 13 nC |
| Package | TO‑220, TO‑220F |
| Operating Temperature Range | -55 °C to +150 °C |
The devices are rated for a maximum drain‑source voltage of 800 V.
The typical gate charge is about 13 nC.
They are offered in TO‑220 and TO‑220F surface‑mount packages.
They operate from –55 °C up to +150 °C.