FQPF3N80 is a 800V N-Channel MOSFET. It is manufactured using Fairchild’s proprietary, planar stripe, DMOS technology and features low on-state resistance, superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply.
The FQPF3N80 is an 800 V N‑Channel enhancement mode power MOSFET built with Fairchild's planar stripe DMOS technology. It is designed for high‑efficiency switch‑mode power supplies, offering low gate charge, low output capacitance, and robust avalanche capability.
Key specifications include a continuous drain current of 18 A at 25 °C, typical on‑resistance of 5 mΩ at VGS = 10 V, and a total gate charge of about 19 nC. The datasheet also provides detailed electrical characteristics, typical performance curves, and package dimensions for the TO‑220F package.
| Drain‑Source Voltage (VDS) | 800 V |
|---|---|
| Continuous Drain Current (ID) at 25 °C | 18 A |
| Gate‑Source Voltage (VGS) Rating | ±30 V |
| On‑Resistance (RDS(on)) Typical | 5.0 mΩ @ VGS=10 V |
| Total Gate Charge (Qg) Typical | 15 nC |
| Total Gate Charge (Qg) Typical (high current) | 19 nC |
| Power Dissipation (PD) at 25 °C | 39 W |
| Thermal Resistance Junction‑to‑Case | 3.2 °C·W |
| Thermal Resistance Junction‑to‑Ambient | 62.5 °C·W |
The device is rated for a maximum drain‑source voltage of 800 V.
It can conduct up to 18 A continuously at a case temperature of 25 °C.
The typical gate charge is about 15 nC.
The typical on‑resistance is 5 mΩ when the gate‑source voltage is 10 V.