FQPF44N08 N-Channel MOSFET is a power field effect transistor produced by Fairchild. It has low on-state resistance, superior switching performance, high energy pulse bearing capacity, and is suitable for low voltage applications such as automotive, high efficiency switching for DC/DC converters and DC motor control.
The FQPF44N08 is an 80 V N‑Channel enhancement‑mode power MOSFET built with Fairchild’s planar stripe DMOS technology. It offers low on‑resistance, low gate charge, fast switching and high avalanche capability, making it suitable for automotive, DC‑DC converters and motor‑control applications.
The document provides absolute maximum ratings, detailed electrical characteristics, thermal data, typical performance curves, and mechanical dimensions for the TO‑220F package. It also includes trademark, disclaimer and product‑status information.
| Drain‑Source Voltage (VDS) | 80 V |
|---|---|
| Continuous Drain Current (ID) @ 25 °C | 25 A |
| Pulsed Drain Current (ID) (Note 1) | 100 A |
| Gate‑Source Voltage (VGS) | ±25 V |
| On‑Resistance (RDS(on)) typical | 0.034 Ω @ VGS=10 V |
| Junction‑to‑Case Thermal Resistance (RJC) | 3.7 °C·W |
| Junction‑to‑Ambient Thermal Resistance (RJA) | 62.5 °C·W |
The device is rated for a maximum drain‑source voltage of 80 V.
It can conduct up to 25 A continuously at a case temperature of 25 °C.
Typical on‑resistance is 0.034 Ω when VGS = 10 V.
The MOSFET is supplied in a TO‑220F package.