This document describes the features and characteristics of the FQPF45N03L 30V LOGIC N-Channel MOSFET, including low resistance, fast switching, and high energy pulse withstand capability.
The FQPF45NO03L MOSFET is an N‑Channel enhancement mode power transistor built with Fairchild’s planar stripe DMOS technology. It is optimized for low‑voltage applications such as DC/DC converters and power management in portable, battery‑operated products.
Key specifications include a 30 V drain‑source breakdown voltage, 29 A continuous drain current at 25 °C, 0.0182 Ω typical on‑resistance at Vgs = 10 V, and a maximum junction temperature of 175 °C. The device is supplied in a TO‑220F package and features low gate charge (≈15 nC) and fast switching performance.
| Drain‑Source Voltage (VDS) | 30 V |
|---|---|
| Continuous Drain Current (ID) at 25 °C | 29 A |
| Pulsed Drain Current (ID) (Note 1) | 116 A |
| Gate‑Source Voltage (VGS) | ±20 V |
| On‑Resistance (RDS(on)) typical | 0.0182 Ω @ VGS = 10 V |
| Power Dissipation (PD) at 25 °C | 31 W |
| Maximum Junction Temperature | 175 °C |
| Package Type | TO‑220F |
The device can handle a continuous drain current of 29 A at a case temperature of 25 °C.
The MOSFET is rated for a drain‑source breakdown voltage of 30 V.
The typical gate charge is about 15 nC.
It is supplied in a TO‑220F package.