FQPF3N80 is an 800V N-channel MOSFET manufactured by Fairchild. Its features are 1.8A, 800V, RDS(on) = 5.0Ω @VGS = 10 V, low gate charge (typical 15 nC), low Crss (typical 7.0 pF), fast switching, 100% avalanche tested and improved dv/dt capability.
The FQPF3N80 is an 800 V N‑Channel enhancement mode power MOSFET fabricated with Fairchild’s planar stripe DMOS technology. It is designed for low on‑state resistance, fast switching and high‑energy pulse capability, making it suitable for high‑efficiency switch‑mode power supplies.
The document provides absolute maximum ratings, electrical characteristics, typical performance curves, thermal data and package dimensions for the TO‑220F package, along with trademark and product status information.
| Drain‑Source Voltage (VDS) | 800 V |
|---|---|
| Continuous Drain Current (ID) at 25 °C | 18 A |
| Pulsed Drain Current (ID) (Note 1) | 7.2 A |
| Gate‑Source Voltage (VGS) | ±30 V |
| Power Dissipation (PD) at 25 °C | 39 W |
| Thermal Resistance Junction‑to‑Case (RθJC) | 3.2 °C·W |
| Thermal Resistance Junction‑to‑Ambient (RθJA) | 62.5 °C·W |
| Typical Gate Charge (Qg) | 15 nC |
| Package Type | TO‑220F |
The FQPF3N80 can withstand up to 800 V drain‑source voltage.
It is rated for a continuous drain current of 18 A at 25 °C.
The typical gate charge is 15 nC.
The device is supplied in a TO‑220F package.