FQP3N80C/FQPF3N80C is a Fairchild produced N-channel enhancement mode power field effect transistor using DMOS technology, with low on-state resistance, superior switching performance and high energy pulse withstand capability, suitable for high efficiency switch mode power supplies.
The FQP3N80C and FQPF3N80C are N‑Channel enhancement mode power MOSFETs fabricated with Fairchild’s planar stripe DMOS technology. They are optimized for low on‑state resistance, fast switching, and high avalanche capability, making them suitable for high‑efficiency switch‑mode power supplies.
Key specifications include an 800 V drain‑source rating, 3 A continuous drain current at 25 °C, 12 A pulsed current, low gate charge (≈13 nC), and a typical on‑resistance of 4.82 mΩ at VGS = 10 V. The devices are offered in TO‑220 and TO‑220F packages with detailed thermal and electrical characteristics provided.
| Drain‑Source Voltage (VDS) | 800 V |
|---|---|
| Gate‑Source Voltage (VGS) | ±30 V |
| On‑Resistance (RDS(on)) @ VGS=10 V | 4.82 mΩ |
The maximum drain‑source voltage is 800 V.
The on‑resistance is 4.82 mΩ at a gate voltage of 10 V.