This document describes the features and characteristics of the FQPF33N10 N-Channel MOSFET transistor, including maximum current and voltage, low charge and capacitance, fast switching speed, and ability to withstand avalanche and commutation modes.
The FQPF33N10 is a 100 V N‑Channel enhancement mode power MOSFET built with Fairchild’s planar stripe DMOS technology. It is intended for low‑voltage applications such as audio amplifiers, high‑efficiency DC/DC converters and DC motor control.
Key specifications include a continuous drain current of 18 A at 25 °C, a pulsed rating of 72 A, on‑resistance of about 0.052 Ω at Vgs = 10 V, low gate charge (≈38 nC), and a maximum junction temperature of 175 °C. The device is supplied in a TO‑220F package and meets 100 % avalanche test requirements.
| Drain‑Source Voltage (VDS) | 100 V |
|---|---|
| Continuous Drain Current (ID) @ 25 °C | 18 A |
| Pulsed Drain Current (ID) (Note 1) | 72 A |
| Gate‑Source Voltage (VGS) Rating | ±25 V |
| Gate Charge (Qg) | 38 nC (typ) |
| Power Dissipation (PD) @ 25 °C | 41 W |
| Thermal Resistance Junction‑to‑Case (RθJC) | 3.70 °C/W |
| Thermal Resistance Junction‑to‑Ambient (RθJA) | 62.5 °C/W |
| Maximum Junction Temperature (Tj) | 175 °C |
| Package | TO‑220F |
The device can handle a continuous drain current of 18 A at a case temperature of 25 °C.
It is supplied in a TO‑220F surface‑mount package.
The MOSFET is rated for a maximum junction temperature of 175 °C.