FQPF33N10L is a 100V logic N-channel MOSFET with 18A continuous current and 0.052ohm on-state resistance. It features low gate charge, low Crss, fast switching and 100% avalanche tested.
The FQPF33N10L MOSFET is a N‑Channel enhancement mode power transistor built with Fairchild’s planar stripe DMOS technology. It is designed for low‑voltage applications such as high‑efficiency DC/DC converters and DC motor control, offering low on‑state resistance, fast switching, and robust avalanche capability.
Key specifications include a 100 V drain‑source rating, 18 A continuous drain current at 25 °C (12.7 A at 100 °C), 72 A pulsed current, typical Rds(on) of 0.052 Ω at Vgs = 10 V, and a maximum junction temperature of 175 °C. The device is supplied in a TO‑220F package with thermal resistance values of 3.7 °C/W (junction‑to‑case) and 62.5 °C/W (junction‑to‑ambient).
| Drain‑Source Voltage (VDS) | 100 V |
|---|---|
| Continuous Drain Current (ID) @ 25°C | 18 A |
| Pulsed Drain Current (ID) (Note 1) | 72 A |
| Gate Charge typical | 30 nC |
| Power Dissipation (PD) @ 25°C | 41 W |
| Junction‑to‑Case Thermal Resistance | 3.7 °C/W |
| Junction‑to‑Ambient Thermal Resistance | 62.5 °C/W |
| Operating Temperature Range | -55 °C to +175 °C |
The device can handle a continuous drain current of 18 A at 25 °C (12.7 A at 100 °C).
The MOSFET is rated for a maximum junction temperature of 175 °C.
It is supplied in a TO‑220F package.