This document describes the features and characteristics of FQPF2P40 400V P-Channel MOSFET, including low on-state resistance, low gate charge, and fast switching.
The FQPF2P40 is a P‑Channel enhancement‑mode power MOSFET fabricated with Fairchild’s planar stripe DMOS technology. It is optimized for low on‑state resistance, fast switching, and high‑energy avalanche performance, making it suitable for electronic lamp ballast applications using complementary half‑bridge topologies.
Key electrical characteristics include a -400 V drain‑source rating, -1.34 A continuous drain current at 25 °C, low gate charge (~10 nC), low reverse transfer capacitance (≈6.5 pF), and a maximum power dissipation of 28 W. The device is supplied in a TO‑220F package with thermal resistance values of 4.46 °C·W (junction‑to‑case) and 62.5 °C·W (junction‑to‑ambient).
| Drain‑Source Voltage (VDS) | -400 V |
|---|---|
| Continuous Drain Current (ID) at 25 °C | -1.34 A |
| Gate‑Source Voltage (VGS) | +30 V |
| Total Gate Charge (Qg) | 10 nC (typical) |
| Reverse Transfer Capacitance (Crss) | 6.5 pF (typical) |
| Maximum Power Dissipation (P_D) at 25 °C | 28 W |
| Thermal Resistance, Junction‑to‑Case (RθJC) | 4.46 °C·W |
| Avalanche Energy (EAS) | 120 mJ |
The device is rated for a maximum drain‑source voltage of -400 V.
The typical total gate charge is about 10 nC.
It is supplied in a TO‑220F surface‑mount package.
The MOSFET can dissipate up to 28 W at a junction temperature of 25 °C.